HYMP532S646-E3 Datasheet, PDF (15/23 Pages) Hynix Semiconductor – 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.

1200pin Unbuffered DDR2 SDRAM SO-DIMMs
512MB, 64M x 64 SO - DIMM : HYMP564S64[P]6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6(L)
IDD7
E3(DDR2 400@CL 3)
760
800
48
280
320
160
40
520
860
980
920
44
32
1580
C4(DDR2 533@CL 4)
820
860
56
320
360
200
48
600
1060
1180
1000
44
32
1620
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
1
1
1GB, 128M x 64 SO - DIMM : HYMP112S64M[P]8
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4R
IDD4W
IDD5B
IDD6
IDD6(L)
IDD7
E3(DDR2 400@CL 3)
1080
1160
96
560
640
320
80
880
1480
1640
1760
88
64
2200
C4(DDR2 533@CL 4)
1240
1320
112
640
720
400
96
1040
1800
1960
1920
88
64
2280
Notes:
1. IDD6 current values are guaranted up to Tcase of 85℃ max.
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
1
1
Rev. 1.0 / Feb. 2005
15