HYMP532S646-E3 Datasheet, PDF (12/23 Pages) Hynix Semiconductor – 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.

1200pin Unbuffered DDR2 SDRAM SO-DIMMs
OUTPUT BUFFER LEVELS
OUTPUT AC TEST CONDITIONS
Symbol
V_OTR
Parameter
Output Timing Measurement Reference Level
Notes:
1. The VDDQ of the device under test is referenced.
SSTL_18
0.5 * V_DDQ
Units
V
Notes
1
OUTPUT DC CURRENT DRIVE
Symbol
Parameter
SSTl_18
Units
Notes
I_OH(dc)
I_OL(dc)
Output Minimum Source DC Current
Output Minimum Sink DC Current
- 13.4
13.4
mA
1, 3, 4
mA
2, 3, 4
Notes:
1. V_DDQ = 1.7 V; V_OUT = 1420 mV. (V_OUT - V_DDQ)/I_OH must be less than 21 ohm for values of V_OUT between V_DDQ and
V_DDQ - 280 mV.
2. V_DDQ = 1.7 V; V_OUT = 280 mV. V_OUT/I_OL must be less than 21 ohm for values of V_OUT between 0 V and 280 mV.
3. The dc value of V_REF applied to the receiving device is set to V_TT
4. The values of I_OH(dc) and I_OL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device
drive current capability to ensure V_IH min plus a noise margin and V_IL max minus a noise margin are delivered to an
SSTL_18 receiver.
The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define
a convenient driver current for measurement.
Rev. 1.0 / Feb. 2005
12