HY51VS17403HG Datasheet, PDF (8/11 Pages) Hynix Semiconductor – 4M x 4Bit EDO DRAM

HY51V(S)17403HG/HGL
EDO Page Mode Cycle
Parameter
EDO mode cyle time
EDO mode /RAS pulse width
Access time from /CAS precharge
/RAS hold time from /CAS precharge
Output data hold time from /CAS low
/CAS hold time referred /OE
/CAS to /OE setup time
Read command hold time
from /CAS precharge
Symbol
tHPC
tRASP
tACP
tRHCP
tDOH
tCOL
tCOP
-50
Min Max
20
-
-
100K
-
30
30
-
3
-
8
-
5
-
-60
Min Max
25
-
-
100K
-
35
35
-
3
-
10
-
5
-
-70
Unit Note
Min Max
30
-
ns 20
-
100K ns 16
-
40
ns 9,17,19
40
-
ns
3
-
ns
9
13
-
ns
5
-
ns
tRHCP
30
-
35
-
40
-
ns
EDO Page Mode Read-Modify-Write Cycle
Parameter
EDO Page read-modify-write cycle time
EDO mode read-modify-write cycle
/CAS precharge to /WE delay time
Symbol
tHPRWC
-50
Min Max
57
-
tCPW
45
-
-60
Min Max
68
-
54
-
-70
Unit Note
Min Max
79
-
ns
62
-
ns 14
TEST Mode cycle
Parameter
Test mode /WE setup time
Test mode /WE hold time
Symbol
tWTS
tWTH
-50
Min Max
0
-
10
-
-60
Min Max
0
-
10
-
-70
Unit Note
Min Max
0
-
ns
10
-
ns
Self Refresh Mode(L-version)
Parameter
/RAS pulse width (self refresh)
/RAS precharge time(self refresh)
/CAS hold time(self refresh)
Symbol
tRASS
tRPS
tCHS
-50
Min Max
100
-
90
-
-50
-
-60
Min Max
100
-
110
-
-50
-
-70
Unit Note
Min Max
100
-
us
130
-
ns
-50
-
ns
Rev.0.1/Apr.01
8