HYMD116M725B8-J Datasheet, PDF (7/19 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM SO-DIMM

HYMD116M725B(L)8-J/M/K/H/L
DC CHARACTERISTICS I (TA=0 to 70^oC, Voltage referenced to VSS=0V)
Parameter
Input Leakage Current\
Add, CMD, /CS, /CKE
CK, /CK
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min.
Max
-18
-4
-5
VTT + 0.76
-
18
4
5
-
VTT - 0.76
Unit
Note
uA
1
uA
2
V
IOH = -15.2mA
V
IOL = +15.2mA
Note :
1. VIN=0 to 3.6V, All other pins are not tested under VIN=0V
2. DOUT is disabled, VOUT=0 to 2.7V
3. These values are device characteristics.
Rev. 0.2/Aug. 02
7