HYMD116M725B8-J Datasheet, PDF (1/19 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM SO-DIMM

DESCRIPTION
16Mx72 bits
Unbuffered DDR SDRAM SO-DIMM
HYMD116M725B(L)8-J/M/K/H/L
PRELIMINARY
Hynix HYMD116M725B(L)8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline
Dual In-Line Memory Modules (SO-DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix
HYMD116M725B(L)8-J/M/K/H/L series consists of nine 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 200pin
glass-epoxy substrate. Hynix HYMD116M725B(L)8-J/M/K/H/L series provide a high performance 8-byte interface in
67.60mmX 31.75mm form factor of industry standard. It is suitable for easy interchange and addition.
Hynix HYMD116M725B(L)8-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchronous
operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control
inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on
both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high
bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable
latencies and burst lengths allow variety of device operation in high performance memory system.
Hynix HYMD116M725B(L)8-J/M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function
is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to iden-
tify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.
FEATURES
• 128MB (16M x 72) Unbuffered DDR SO-DIMM based
on 16Mx8 DDR SDRAM
• JEDEC Standard 200-pin small outline dual in-line
memory module (SO-DIMM)
• 2.5V +/- 0.2V VDD and VDDQ Power supply
• All inputs and outputs are compatible with SSTL_2
interface
• Fully differential clock operations (CK & /CK) with
100MHz/125MHz/133MHz/166MHz
• All addresses and control inputs except Data, Data
strobes and Data masks latched on the rising edges
of the clock
• Data(DQ), Data strobes and Write masks latched on
both rising and falling edges of the clock
ORDERING INFORMATION
• Data inputs on DQS centers when write (centered
DQ)
• Data strobes synchronized with output data for read
and input data for write
• Programmable CAS Latency 2 / 2.5 supported
• Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
• tRAS Lock-out function supported
• Internal four bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• 4096 refresh cycles / 64ms
Part No.
HYMD116M725B(L)8-J
HYMD116M725B(L)8-M
HYMD116M725B(L)8-K
HYMD116M725B(L)8-H
HYMD116M725B(L)8-L
Power Supply
Clock Frequency
Interface
Form Factor
VDD=2.5V
VDDQ=2.5V
166MHz (*DDR333)
133MHz (*DDR266:2-2-2)
133MHz (*DDR266A)
133MHz (*DDR266B)
125MHz (*DDR200)
SSTL_2
200pin Unbuffered SO-DIMM
* JEDEC Defined Specifications compliant
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.2/Aug. 02
1