HYMD116M725B8-J Datasheet, PDF (14/19 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM SO-DIMM

HYMD116M725B(L)8-J/M/K/H/L
15. tDAL = (tDPL / tCK ) + (tRP / tCK ). For each of the terms above, if not already an integer, round to the next highest integer.
tCK is equal to the actual system clock cycle time.
Example: For DDR266B at CL=2.5 and tCK = 7.5 ns,
tDAL = (15 ns / 7.5 ns) + (20 ns / 7.5 ns) = (2.00) + (2.67)
Round up each non-integer to the next highest integer: = (2) + (3), tDAL = 5 clock
16. For the parts which do not has internal RAS lockout circuit, Active to Read with Auto precharge delay should be
tRAS - BL/2 x tCK
17. tHZ and tLZ transitions occur in the same access time windows as valid data trasitions. These parameters are not referenced
to a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
Rev. 0.2/Aug. 02
14