HY67V161610D Datasheet, PDF (6/11 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

HY57V161610D
D C C H A R A C T E R IS T IC S II ( T A = 0 ° C t o 7 0 ° C , V D D = 3 . 0 V t o 3 . 6 V , V S S = 0 V ^Note1,2)
Parameter
Symbol
Test Condition
Speed
-5
-55
-6
-7
Unit
Note
-8
-10
Operating Current
ID D 1
Burst Length=1, One bank active
tRAS ≥ tRAS(min),tRP ≥ tRP(min),
IO=0mA
130
130
120
110
110
110
mA
2
Precharge Standby
Current
in power down mode
ID D 2 P
ID D 2 P S
CKE ≤ VIL(max), tCK = min.
CKE ≤ VIL(max), tCK = ∞
1
mA
1
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
min
Precharge Standby
ID D 2 N
Input signals are changed one time
20
Current
during 2Clks. All other pins ≥ VDD-0.2V
in non power down
or ≤ 0.2V
mA
mode
ID D 2 N S
CKE ≥ VIH(min), tCK = ∞
15
Input signals are stable.
Active Standby Current
in power down mode
ID D 3 P
ID D 3 P S
CKE ≤ VIL(max), tCK = min
CKE ≤ VIL(max), tCK = ∞
30
mA
30
CKE ≥ VIH(min), CS ≥ VIH(min), tCK =
min
Active Standby Current
in non power down
mode
ID D 3 N
Input signals are changed one time
during 2CLKs. All other pins ≥ VDD-
0.2V or ≤ 0.2V
50
mA
ID D 3 N S
CKE ≥ VIH(min), tCK = ∞
30
Input signals are stable
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min),
tRAS ≥ tRAS(min),
IO=0mA
All banks active
CL=3
130
130
120
110
110
90
CL=2
110
110
-
mA
3
-
Auto Refresh Current
ID D 5
tRRC ≥ tRRC(min), All banks active
130
130
110
110
110
110
mA
Self Refresh Current
ID D 6
CKE ≤ 0.2V
2
mA
Note :
1.V DD (min) is 3.15V when HY57V161610DTC-7 operates at C A S latency=2 and tCK2=8.9ns.
2.V DD (min) of HY57V161610DTC-5/55 is 3.15V
3.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.
Rev. 3.6/Apr.01
6