HY67V161610D Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

A B S O L U T E M A X IM U M R A T IN G S
HY57V161610D
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V SS
Voltage on V D D relative to V SS
Short Circuit Output Current
Power Dissipation
S o l d e r i n g T e m p e r a t u r e ·T i m e
Symbol
TA
TSTG
V IN , V O U T
V DD
IO S
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
2 6 0 ·1 0
Note : Operation at above absolute maximum rating can adversely affect device reliability.
D C O P E R A T IN G C O N D IT IO N ( T A = 0 °C t o 7 0 °C )
Unit
°C
°C
V
V
mA
W
° C ·S e c
Parameter
Power Supply Voltage
Input high voltage
Input low voltage
Symbol
VDD , V DDQ
V IH
V IL
Min
3.0
2.0
-0.5
Typ.
3.3
3.0
0
Note :
1.All voltages are referenced to V S S = 0V.
2.V DD (min) is 3.15V when HY57V161610DTC-7 operates at C A S latency=2
3.V DD (min) of HY57V161610DTC-5/55 is 3.15V
4 . V IH ( m a x ) i s a c c e p t a b l e 4 . 6 V A C p u l s e w i d t h w i t h ≤ 1 0 n s o f d u r a t i o n .
5 . V IL ( m i n ) i s a c c e p t a b l e - 1 . 5 V A C p u l s e w i d t h w i t h ≤ 1 0 n s o f d u r a t i o n .
Max
3.6
VDD + 0.3
0.8
Unit
V
V
V
Note
1, 2, 3
1, 4
1, 5
A C O P E R A T IN G C O N D IT IO N ( T A = 0 °C t o 7 0 °C , V DD = 3 . 0 V t o 3 . 6 V , V S S = 0 V )
Parameter
AC input high / low level voltage
Input timing measurement reference level voltage
Input rise / fall time
Output timing measurement reference level
Output load capacitance for access time measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4/0.4
1.4
1
1.4
30
Note :
1. Output load to measure access times is equivalent to two TTL gates and one capacitance(30pF).
For details, refer to AC/DC output load circuit.
2. V DD (min) is 3.15V when HY57V161610DTC-7 operates at C A S latency=2 and tCK2=8.9ns
3. V DD (min) of HY57V161610DTC-5/55 is 3.15V‘
Unit
V
V
ns
V
pF
Note
1
Rev. 3.6/Apr.01
4