HY67V161610D Datasheet, PDF (5/11 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

C A P A C IT A N C E ( T A = 2 5 °C , f = 1 M H z )
Parameter
Input capacitance
Data input / output capacitance
Pin
CLK
A0 ~ A10, BA
CKE, C S, RAS, C A S, W E, UDQM, LDQM
DQ0 ~ DQ15
Symbol
CI1
CI2
C I/O
O U T P U T L O A D C IR C U IT
HY57V161610D
Min
Max
Unit
2.5
4
pF
2.5
5
pF
4
6.5
pF
Output
V t t= 1 . 4 V
R T=250 Ω
3 0pF
Output
3 0pF
DC Output Load Circuit
AC Output Load Circuit
D C C H A R A C T E R IS T IC S I ( T A = 0°C t o 7 0 °C )
Parameter
Power Supply Voltage
Input leakage current
Output leakage current
Output high voltage
Output low voltage
Symbol
V DD
IL
IO
VOH
VOL
Min.
3.0
-1
-1
2.4
-
Max
3.6
1
1
-
0.4
Note :
1.V DD (min) is 3.15V when HY57V161610DTC-7 operates at C A S latency=2 and tCK2=8.9ns.
2.V DD (min) of HY57V161610DTC-5/55 is 3.15V
3 . V IN = 0 t o 3 . 6 V , A l l o t h e r p i n s a r e n o t u n d e r t e s t = 0 V
4.D OUT is disabled, V OUT=0 to 3.6V
Unit
V
uA
uA
V
V
Note
1, 2
3
4
IO H = - 4 m A
IOL = + 4 m A
Rev. 3.6/Apr.01
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