HY67V161610D Datasheet, PDF (2/11 Pages) Hynix Semiconductor – 2 Banks x 512K x 16 Bit Synchronous DRAM

P IN C O N F IG U R A T IO N
HY57V161610D
VDD
DQ0
DQ1
VSSQ
DQ2
DQ3
VDDQ
DQ4
DQ5
VSSQ
DQ6
DQ7
VDDQ
LDQM
WE
CAS
RAS
CS
A11
A10
A0
A1
A2
A3
VDD
1
50
2
49
3
48
4
47
5
46
6
45
7
44
8
43
9
42
10
41
11
40
12
39
50pin TSOP-II
13 _{400mil x 825mil} 38
14 _{0.8mm pin pitch} 37
15
36
16
35
17
34
18
33
19
32
20
31
21
30
22
29
23
28
24
27
25
26
VSS
DQ15
DQ14
VSSQ
DQ13
DQ12
VDDQ
DQ11
DQ10
VSSQ
DQ9
DQ8
VDDQ
NC
UDQM
CLK
CKE
NC
A9
A8
A7
A6
A5
A4
VSS
P IN D E S C R IP T IO N
PIN
CLK
CKE
CS
BA
A0 ~ A10
RAS, CAS, WE
LDQM, UDQM
DQ0 ~ DQ15
V D D/V SS
V D D Q/V S S Q
NC
PIN NAME
Clock
Clock Enable
Chip Select
Bank Address
Address
Row Address Strobe,
Column Address Strobe,
Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
No Connection
D E S C R IPTIO N
The system clock input. All other inputs are referenced to the SDRAM on the
rising edge of CLK.
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh.
Command input enable or mask except CLK, CKE and DQM
Select either one of banks during both RAS and CAS activity.
Row Address : RA0 ~ RA10, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
RAS, C A S and W E define the operation.
Refer function truth table for details
DQM control output buffer in read mode and mask input data in write mode
Multiplexed data input / output pin
Power supply for internal circuit and input buffer
Power supply for DQ
No connection
Rev. 3.6/Apr.01
2