HY57V283220T Datasheet, PDF (6/15 Pages) Hynix Semiconductor – 4 Banks x 1M x 32Bit Synchronous DRAM

HY57V283220(L)T(P) / HY5V22(L)F(P)
ABSOLUTE MAXIMUM RATINGS
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature Þ Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 ⋅ 10
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA=0 to 70°C)
Unit
°C
°C
V
V
mA
W
°C ⋅ Sec
Parameter
Power Supply Voltage
Input high voltage
Input low voltage
Symbol
VDD, VDDQ
VIH
VIL
Min
3.0
2.0
- 0.3
Typ.
3.3
3.0
0
Max
3.6
VDDQ + 0.3
0.8
Note :
1.All voltages are referenced to VSS = 0V
2.VIH (max) is acceptable 5.6V AC pulse width with ≤3ns of duration with no input clamp diodes
3.VIL (min) is acceptable -2.0V AC pulse width with ≤3ns of duration with no input clamp diodes
Unit
V
V
V
Note
1
1,2
1,3
AC OPERATING CONDITION (TA=0 to 70°C, 3.0V ≤VDD ≤3.6V, VSS=0V - Note1)
Parameter
AC input high / low level voltage
Input timing measurement reference level voltage
Input rise / fall time
Output timing measurement reference level
Output load capacitance for access time measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4/0.4
1.4
1
1.4
30
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF)
For details, refer to AC/DC output load circuit
Unit
V
V
ns
V
pF
Note
1
Rev. 0.9 / July 2004
6