HMT451R7MFR8A Datasheet, PDF(43/71 Page) Hynix Semiconductor – DDR3L SDRAM Registered DIMM Based on 4Gb M-die

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HMT451R7MFR8A Datasheet, PDF (43/71 Pages) Hynix Semiconductor – DDR3L SDRAM Registered DIMM Based on 4Gb M-die

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Refresh parameters by device density

Parameter

RTT_Nom Setting

512Mb 1Gb

2Gb

4Gb

8Gb Units Notes

REF command ACT or

REF command time

tRFC

110

160

260

350 ns

Average periodic

refresh interval

tREFI

0 ï°C ï£ TCASE ï£ 85 ï°C

85 ï°C ï¼ TCASE ï£ 95 ï°C

7.8

3.9

7.8

3.9

7.8

3.9

7.8

3.9

7.8

3.9

us 1

Notes:

1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices

support the following options or requirements referred to in this materia.

Rev. 1.0 / Aug. 2013

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