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H1A424M167 Datasheet, PDF (42/47 Pages) Hynix Semiconductor – Image Signal Processor for Hyundai CMOS Image Sensor
Hyundai Electronics Industries Co., Ltd.
H1A424M167
9. Electrical Characteristics
9.1. Absolute Maximum Ratings
Symbol
Parameter
TAMB
TSTG
VDD
IODD
PTOT
VI
VO
Operating ambient temperature
Storage temperature
3.3V DC supply voltage
I/O pin voltage with respect to VSS
Total power dissipation
Input voltage
Output voltage
Min.
0
-40
3.0
-0.3
-
-0.3
-0.3
Max
70
125
3.6
VDD + 0.3
182
VDD + 0.3
VDD + 0.3
Unit
°C
°C
V
V
mW
V
V
9.2. DC Characteristics
Symbol
Parameter
Conditions Min Typ Max Unit
IDD
Supply current
all modes on -
39 55.2 mA
all modes off 13.5
-
-
mA
MCLK Master Clock
-
-
36
48 MHz
VIL
Low level input voltage
VIH
High level input voltage
VOL
Low level output voltage
VOH
High level output voltage
-
- 0.8Vmax V
2.1Vmin -
-
V
-
-
0.4
V
2.4
-
-
V
* Test condition
VDD = 3.3V, Temperature = 25 °C; Output load = 10pF; MCLK : 36MHz
unless otherwise specified.
1999 October 11
Page 42