HMT41GU6MFR8A Datasheet, PDF (4/57 Pages) Hynix Semiconductor – DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die

Key Parameters
MT/s
DDR3-1066
DDR3-1333
DDR3-1600
DDR3-1866
Grade
-G7
-H9
-PB
-RD
tCK
(ns)
1.875
1.5
1.25
1.07
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
7
13.125 13.125 37.5 50.625
7-7-7
9
13.5
13.5
(13.125)* (13.125)*
36
49.5
(49.125)*
9-9-9
11
13.75 13.75
(13.125)* (13.125)*
35
48.75
(48.125)*
13
13.91 13.91
(13.125)* (13.125)*
34
47.91
(47.125)*
11-11-11
13-13-13
*SK hynix DRAM devices support optional downbinning to CL11, CL9 and CL7. SPD setting is programmed to match.
Speed Grade
Grade
-G7
-H9
-PB
-RD
Frequency [MHz]
CL6
CL7
CL8 CL9
CL10
CL11
800
1066 1066
800
1066 1066 1333 1333
800
1066 1066 1333 1333
1600
800
1066 1066 1333 1333
1600
Address Table
CL12
CL13
1866
Remark
Refresh Method
Row Address
Column Address
Bank Address
Page Size
2GB(1Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
2GB(1Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
4GB(2Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
4GB(2Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
Rev. 1.2 / Jul. 2013
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