HY5S5B2BLF-6E Datasheet, PDF (35/54 Pages) Hynix Semiconductor – 256M (8Mx32bit) Mobile SDRAM

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256Mbit (8Mx32bit) Mobile SDR Memory
HY5S5B2BLF(P) Series
READ to PRECHARGE
Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met.
Note that part of the row precharge time is hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time
(as described above) provides the same operation that would result from the same fixed-length burst with auto pre-
charge.
The disadvantage of the PRECHARGEcommand is that it requires that the command and address buses be available at
the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to trun-
cate fixed-length or full-page bursts.
CLK
Command
Address
READ
BA, Col
n
PRE
Bank
A, All
ACT
tRP
BA,
Row
CL =2
DQ
Don
CL =3
Don
DQ
Don't Care
1) DO n = Data Out from column n
2) Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks.
3) The ACTIVE command may be applied if tRC has been met.
READ to PRECHARGE
Rev 1.0 / Apr. 2006
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