HY5S5B2BLF-6E Datasheet, PDF (10/54 Pages) Hynix Semiconductor – 256M (8Mx32bit) Mobile SDRAM

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256Mbit (8Mx32bit) Mobile SDR Memory
HY5S5B2BLF(P) Series
CAPACITANCE (TA= 25 ^oC, f=1MHz)
Parameter
Input capacitance
Data input/output capacitance
Pin
CLK
A0~A11, BA0, BA1, CKE, CS, RAS,
CAS, WE, DQM0~3
DQ0 ~ DQ31
Symbol
CI1
CI2
CI/O
H/S
Min Max
2
4.0
2
4.0
2
4.5
Unit
pF
pF
pF
DC CHARACTERRISTICS I (TA= -25 to 85^oC)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min
-1
-1
VDDQ-0.2
-
Note :
1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V.
2. DOUT is disabled. VOUT= 0 to 1.95V.
3. IOUT = - 0.1mA
4. IOUT = + 0.1mA
Max
1
1
-
0.2
Unit
uA
uA
V
V
Note
1
2
3
4
Rev 1.0 / Apr. 2006
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