HY29LV800 Datasheet, PDF (32/40 Pages) Hynix Semiconductor – 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory

HY29LV800
AC CHARACTERISTICS
WE#
Enter Automatic
Erase
DQ[6]
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Erase
Suspend
Read
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 23. DQ[2] and DQ[6] Operation
Sector Protect and Unprotect, Temporary Sector Unprotect
Parameter
JEDEC Std
Description
t_VIDR V_ID Transition Time for Temporary Sector Unprotect ¹
t_RSP
RESET# Setup Time for
Temporary Sector Unprotect
t_VRES
RESET# Setup Time for Sector Protect and
Unprotect
t_PROT Sector Protect Time
t_UNPR Sector Unprotect Time
Notes:
1. Not 100% tested.
Min
Min
Min
Max
Max
Speed Option
- 55 - 70 - 90
500
4
1
150
15
Unit
ns
µs
µs
µs
ms
V _ID
RESET#
0 or 3V
t_VIDR
CE#
WE#
RY/BY#
32
t_VIDR
t_RSP
Figure 24. Temporary Sector Unprotect Timings
0 or 3V
Rev. 1.0/Nov. 01