HY29LV800 Datasheet, PDF (25/40 Pages) Hynix Semiconductor – 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory

AC CHARACTERISTICS
HY29LV800
Read Operations
Parameter
JEDEC Std
Description
t_AVAV
t_RC Read Cycle Time ¹
t_AVQV
t_ACC Address to Output Delay
t_ELQV
t_EHQZ
t_GLQV
t_GHQZ
t_AXQX
t_CE Chip Enable to Output Delay
t_DF Chip Enable to Output High Z ¹
t_OE Output Enable to Output Delay
t_DF Output Enable to Output High Z ¹
t_OEH
Output Enable
Hold Time ¹
Read
Toggle and
Data# Polling
t_OH
Output Hold Time from Addresses, CE#
or OE#, Whichever Occurs First ¹
Notes:
1. Not 100% tested.
Test Setup
CE# = V_IL
OE# = V_IL
OE# = V_IL
CE# = V_IL
Min
Max
Max
Max
Max
Max
Min
Min
Min
Speed Option
Unit
- 55 -70 - 90
55 70 90 ns
55 70 90 ns
55 70 90 ns
25 25 30 ns
30 30 35 ns
25 25 30 ns
0
ns
10
ns
0
ns
Addresses
CE#
OE#
WE#
Outputs
t_RC
Addresses Stable
t_ACC
t_OE
t_OEH
t_DF
t_CE
t_OH
Output Valid
RESET#
RY/BY#
0V
Figure 15. Read Operation Timings
Rev. 1.0/Nov. 01
25