HY29LV800 Datasheet, PDF (28/40 Pages) Hynix Semiconductor – 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory

HY29LV800
AC CHARACTERISTICS
Program and Erase Operations
Parameter
JEDEC Std
Description
Speed Option
Unit
- 55 - 70 - 90
t_AVAV
t_AVWL
t_WLAX
t_DVWH
t_WHDX
t_GHWL
t_ELWL
t_WHEH
t_WLWH
t_WHWL
t_WC
t_AS
t_AH
t_DS
t_DH
t_GHWL
t_CS
t_CH
t_WP
t_WPH
Write Cycle Time ¹
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
t_WHWH1 t_WHWH1 Programming Operation ^{1, 2, 3}
Min 55 70 90 ns
Min
0
ns
Min 35
45
45
ns
Min 35
35
45
ns
Min
0
ns
Min
0
ns
Min
0
ns
Min
0
ns
Min 35 35 35 ns
Min
30
ns
Typ
9
µs
Byte Mode
Max
300
µs
Typ
11
µs
Word Mode
Max
360
µs
Typ
9
sec
Byte Mode
Max
27
sec
Chip Programming Operation ^{1, 2, 3, 5}
Typ
5.8
sec
Word Mode
Max
17
sec
t_WHWH2 t_WHWH2 Sector Erase Operation ^{1, 2, 4}
Typ
0.5
sec
Max
10
sec
t_WHWH3 t_WHWH3 Chip Erase Operation ^{1, 2, 4}
Erase and Program Cycle Endurance ¹
Typ
10
sec
Typ
1,000,000
cycles
Min
100,000
cycles
t_VCS
t_RB
t_BUSY
V_CC Setup Time ¹
Recovery Time from RY/BY#
WE# High to RY/BY# Delay
Min
50
µs
Min
0
ns
Min
90
ns
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, V_CC = 3.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90 °C, V_CC = 2.7 volts (3.0 volts for - 55 version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 6 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes/words program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the
maximum byte/word program time specified is exceeded. See Write Operation Status section for additional information.
28
Rev. 1.0/Nov. 01