HY5DU56422DTP Datasheet, PDF (23/37 Pages) Hynix Semiconductor – 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)

HY5DU56422D(L)TP
HY5DU56822D(L)TP
HY5DU561622D(L)TP
DC CHARACTERISTICS I (TA=0 to 70°C, Voltage referenced to VSS = 0V)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min.
-2
-5
VTT + 0.76
-
Max
2
5
-
VTT - 0.76
Unit
uA
uA
V
V
Note : 1. VIN=0 to VDD, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to VDDQ
Note
1
2
IOH = -15.2mA
IOL = +15.2mA
Rev. 0.1 /May 2004
23