HY5DU56422DTP Datasheet, PDF (10/37 Pages) Hynix Semiconductor – 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)

HY5DU56422D(L)TP
HY5DU56822D(L)TP
HY5DU561622D(L)TP
OPERATION COMMAND TRUTH TABLE-I
Current
State
/CS /RAS /CAS /WE Address
H
X
X
X
X
L
H
H
H
X
L
H
H
L
X
IDLE
L
H
L
H
BA, CA, AP
L
H
L
L
BA, CA, AP
L
L
H
H
BA, RA
L
L
H
L
BA, AP
L
L
L
H
X
L
L
L
L
OPCODE
H
X
X
X
X
L
H
H
H
X
L
H
H
L
X
ROW
ACTIVE
L
H
L
H
BA, CA, AP
L
H
L
L
BA, CA, AP
L
L
H
H
BA, RA
L
L
H
L
BA, AP
L
L
L
H
X
READ
L
L
L
L
OPCODE
H
X
X
X
X
L
H
H
H
X
L
H
H
L
X
L
H
L
H
BA, CA, AP
L
H
L
L
BA, CA, AP
L
L
H
H
BA, RA
L
L
H
L
BA, AP
L
L
L
H
X
WRITE
L
L
L
L
OPCODE
H
X
X
X
X
L
H
H
H
X
L
H
H
L
X
L
H
L
H
BA, CA, AP
L
H
L
L
BA, CA, AP
Command
Action
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
NOP or power down³
NOP or power down³
ILLEGAL⁴
ILLEGAL⁴
ILLEGAL⁴
Row Activation
NOP
Auto Refresh or Self Refresh⁵
Mode Register Set
NOP
NOP
ILLEGAL⁴
Begin read : optional AP⁶
Begin write : optional AP⁶
ILLEGAL⁴
Precharge⁷
ILLEGAL¹¹
ILLEGAL¹¹
Continue burst to end
Continue burst to end
Terminate burst
Term burst, new read:optional AP⁸
ILLEGAL
ILLEGAL⁴
Term burst, precharge
ILLEGAL¹¹
ILLEGAL¹¹
Continue burst to end
Continue burst to end
ILLEGAL⁴
Term burst, new read:optional AP⁸
Term burst, new write:optional AP
Rev. 0.1 /May 2004
10