HY5DU56422DTP Datasheet, PDF (12/37 Pages) Hynix Semiconductor – 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)

OPERATION COMMAND TRUTH TABLE-III
HY5DU56422D(L)TP
HY5DU56822D(L)TP
HY5DU561622D(L)TP
Current
State
ROW
ACTIVATING
WRITE
RECOVERING
WRITE
RECOVERING
WITH
AUTOPRE-
CHARGE
REFRESHING
/CS /RAS /CAS /WE
H
X
X
X
L
H
H
H
L
H
H
L
L
H
L
H
L
H
L
L
L
L
H
H
L
L
H
L
L
L
L
H
L
L
L
L
H
X
X
X
L
H
H
H
L
H
H
L
L
H
L
H
L
H
L
L
L
L
H
H
L
L
H
L
L
L
L
H
L
L
L
L
H
X
X
X
L
H
H
H
L
H
H
L
L
H
L
H
L
H
L
L
L
L
H
H
L
L
H
L
L
L
L
H
L
L
L
L
H
X
X
X
L
H
H
H
L
H
H
L
L
H
L
H
Address
X
X
X
BA, CA, AP
BA, CA, AP
BA, RA
BA, AP
X
OPCODE
X
X
X
BA, CA, AP
BA, CA, AP
BA, RA
BA, AP
X
OPCODE
X
X
X
BA, CA, AP
BA, CA, AP
BA, RA
BA, AP
X
OPCODE
X
X
X
BA, CA, AP
Command
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
WRITE/WRITEAP
ACT
PRE/PALL
AREF/SREF
MRS
DSEL
NOP
BST
READ/READAP
Action
NOP - Enter ROW ACT after tRCD
NOP - Enter ROW ACT after tRCD
ILLEGAL⁴
ILLEGAL^4,10
ILLEGAL^4,10
ILLEGAL^4,9,10
ILLEGAL^4,10
ILLEGAL¹¹
ILLEGAL¹¹
NOP - Enter ROW ACT after tWR
NOP - Enter ROW ACT after tWR
ILLEGAL⁴
ILLEGAL
ILLEGAL
ILLEGAL^4,10
ILLEGAL^4,11
ILLEGAL¹¹
ILLEGAL¹¹
NOP - Enter precharge after tDPL
NOP - Enter precharge after tDPL
ILLEGAL⁴
ILLEGAL^4,8,10
ILLEGAL^4,10
ILLEGAL^4,10
ILLEGAL^4,11
ILLEGAL¹¹
ILLEGAL¹¹
NOP - Enter IDLE after tRC
NOP - Enter IDLE after tRC
ILLEGAL¹¹
ILLEGAL¹¹
Rev. 0.1 /May 2004
12