BB403M Datasheet, PDF (8/14 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB403M
Noise Figure vs. Gate Resistance
4
V _DS = 5 V
V _G1= 5 V
3
V _G2S = 4 V
f = 200 MHz
2
1
0
0.1 0.2 0.5 1 2
5 10
Gate Resistance R _G (M W )
Power Gain vs. Drain Current
40
35
30
25
V _DS = 5 V
20 V _G1= 5 V
V _G2S = 4 V
15 ^{RG= variable}
f = 200 MHz
10
0
5 10 15 20 25 30
Drain Current I _D (mA)
Noise Figure vs. Drain Current
4
V _DS = 5 V
V _G1= 5 V
3
V _G2S = 4 V
R_G= variable
f = 200 MHz
2
1
0
5 10 15 20 25 30
Drain Current I _D (mA)
Power Gain vs. Gate Resistance
20
15
10
V _DS = 5 V
5
V _G1= 5 V
V _G2S = 4 V
f = 900 MHz
0
0.1 0.2 0.5 1 2
5 10
Gate Resistance R _G (M W )
8