BB403M Datasheet, PDF (5/14 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
BB403M
Typical Output Characteristics
25
V_G2S = 4 V
V _G1= V_DS
20
15
10
634583376090000kkkk^{ΩkΩΩΩΩ}
1.5 ^MΩ
5
2.2 ^MΩ
1 MΩ ^{820 kΩ}
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Drain Current vs.
Drain to Source Voltage
25 _{VG2S = 4 V}
1.5 V
1.4 V
20
1.3 V
15
1.2 V
10
1.1 V
1.0 V
5
VG1S = 0.9 V
0
1
2
3
4
5
Drain to Source Voltage V _DS (V)
Drain Current vs.
Gate1 to Source Voltage
25
4V
2.5 V
V _DS = 5 V
20
2V
3.5 V
3V
15
1.5 V
10
5
VG2S = 1 V
0
4.0 8.0 1.2 1.6 2.0
Gate1 to Source Voltage V_G1S (V)
5