BB403M Datasheet, PDF (7/14 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Gate1 Current vs.
Gate2 to Source Voltage
10
V _DS = 5 V
R_G = 470 k Ω
8
V_G1 = 5 V
4.5 V
6
4V
3.5 V
4
3V
2.5 V
2
2V
0
1.0 2.0 3.0 4.0 5.0
Gate2 to Source Voltage V_G2S (V)
BB403M
Forward Transfer Admittance
vs. Drain Current
50
VDS = 5 V
3.5 V ^{4 V}
40
3V
2.5 V
30
20
10
VG2S = 2 V
0
5
10 15 20 25
Drain Current I _D (mA)
Forward Transfer Admittance
vs. Gate1 Voltage
50
V _DS = 5 V
R_G = 470 kΩ
40
VG2S = 4 V
3V
30
2V
20
10
1V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Power Gain vs. Gate Resistance
40
35
30
25
20
V _DS = 5 V
15
V _G1= 5 V
V _G2S = 4 V
f = 200 MHz
10
0.1 0.2 0.5 1 2
5 10
Gate Resistance R _G (M Ω)
7