BB403M Datasheet, PDF (1/14 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB403M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-699A (Z)
2nd. Edition
Nov. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance;
(|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R (SOT-143 var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “CX–”.
2. BB403M is individual type number of HITACHI BBFET.