BB403M Datasheet, PDF (6/14 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB403M
Drain Current vs.
Gate2 to Source Voltage
20
V _DS = 5 V
R_G = 470 kΩ
16
12
V ^G1
=5
4.5
4
V
V
V
3.5
3
V
V
8
4
0
1
2
3
4
5
Gate2 to Source Voltage V_G2S (V)
Drain Current vs. Gate1 Voltage
20
V _DS = 5 V
V_G2S = 4 V
16 _{R G = 470 kΩ}
12
8
4
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate1 Current
25
20
V _DS = 5 V
V_G2S = 4 V
15
10
5
0
10 20 30 40 50
Gate1 Current I _G1 (µA)
Gate1 Current vs.
Gate1 to Source Voltage
50
V _DS= 5 V
40
4 V _{3.5 V}
30
3V
2.5 V
20
2V
10
1.5 V
VG2S = 1 V
0
0.4 0.8 1.2 1.6 2.0
Gate1 to Source Voltage V_G1S (V)
6