HAT2016R Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

1000
Switching Characteristics
V_GS = 4 V, V _DD = 10 V
500 ^{PW = 3 µs, duty < 1 %}
200
tr
100
tf
50
t _d(off)
20
t _d(on)
10
0.1 0.2 0.5 1 2
5 10
Drain Current I _D (A)
HAT2016R
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
4V
50Ω
VDD
= 10 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
7