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HAT2016R Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching | |||
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HAT2016R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
6.5
A
Drain peak current
I Note1
D(pulse)
52
A
Body-drain diode reverse drain current IDR
6.5
A
Channel dissipation
Pch Note2
2
W
Channel dissipation
Pch Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
â55 to +150
°C
Note:
1. PW ⤠10µs, duty cycle ⤠1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW⤠10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW⤠10s
2
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