HAT2016R Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
V_(BR)DSS
30
voltage
Gate to source breakdown
voltage
V_(BR)GSS
±20
Gate to source leak current
I _GSS
—
Zero gate voltege drain current I_DSS
—
Gate to source cutoff voltage V_GS(off)
1.0
Static drain to source on state R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance |y_fs|
5
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward
V_DF
—
voltage
Body–drain diode reverse
t _rr
—
recovery time
Note: 4. Pulse test
HAT2016R
Typ Max Unit Test Conditions
—
—
V
I_D = 10mA, V_GS = 0
—
—
V
I_G = ±100µA, V_DS = 0
—
±10 µA
—
10
µA
—
2.0
V
0.03 0.045 Ω
0.05 0.08 Ω
8
—
S
560 —
pF
380 —
pF
170 —
pF
30
—
ns
270 —
ns
40
—
ns
65
—
ns
0.9
1.4
V
V_GS = ±16V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10V, I _D = 1mA
I_D = 4A, V_GS = 10V ^Note4
I_D = 4A, V_GS = 4V ^Note4
I_D = 4A, V_DS = 10V ^Note4
V_DS = 10V
V_GS = 0
f = 1MHz
V_GS = 4V, I_D = 4A
V_DD ≅ 10V
IF = 6.5A, V_GS = 0 ^Note4
45
—
ns
IF = 6.5A, V_GS = 0
diF/ dt =20A/µs
3