HAT2016R Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2016R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
ID=5A
0.1
2A
1A
0
2
4
6
8
10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V _GS = 4 V
0.02
10 V
0.01
0.005
0.2
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
I D = 1 A, 2 A, 5 A
0.06 V _GS = 4 V
0.04
0.02
0
–40
10 V
1 A, 2 A, 5 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
5
75 °C
2
25 °C
1
0.5
0.2
0.2
V _DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I _D (A)
5