HAT2016R Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2016R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-438 H (Z)
9th. Edition
June 1997
SOP–8
78
DD
8 ^{7 65}
1 ²³⁴
56
DD
2
4
G
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain