HAT2016R Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2016R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
10 µs 100 µs
30
10
PW ^{1 ms}
3
1
0.3
DC _Operation
Operation in
this area is
(PW
<
= _{10 ms}
1^N₀^o_s^te_{) 5}
0.1 ^{limited by R DS(on)}
Ta = 25 °C
0.03 _{1 shot Pulse}
0.01 ^{1 Drive Operation}
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
20
10 V
6V
16
5V
4V
Pulse Test
12
4.5 V
3.5 V
8
4
3V
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
20
Tc = –25 °C
16
25 °C
75 °C
12
8
4
V _DS = 10 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
4