HAT2016R Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2016R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 20 A/µs
5
V_GS = 0, Ta = 25°C
0.2 0.5 1 2
5 10 20
Reverse Drain Current I _DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0 10 20 30 40 50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
20
I _D = 6.5 A
40 _{V DD = 5 V}
16
10 V
25 V
30
V_DS
12
V_GS
20
8
10
V _DD = 25 V
4
10 V
5V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Reverse Drain Current vs.
Souece to Drain Voltage
20
Pulse Test
16
12
5V
V_GS = 0, –5 V
8
4
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD (V)
6