HD155121F Datasheet, PDF (40/57 Pages) Hitachi Semiconductor – RF Transceiver IC for GSM and PCN Dual band cellular systems

HD155121F
IQ Modulator and OffsetPLL Typical Performance
3V
V_CC = 3.0V
10
6 17 18 38 32
fin: 540MHz
−10dBm
4p
15n
36 ^IFLO DIV
POONRX1 44
POONRX2 45
0,90,180,270
degree POONTX 46
TX mode
I _{16 IIN}
I
Digital
modulation
I, Ibar, ^{Ibar 15 IINB}
Q, Qbar
signal
generator
Q
generator ^Q
14 ^QIN
(270MHz)
PLLOUT ₁₁ ^560p
33 390
6800p
IQ
Mod.
Offset
PLL
VCOIN1 ₉ ^{33p 68}
1p
100
100
TxVCO
MURATA
MQE9P7-897
33p
Qbar
13
QINB
390
VCOIN2 ₈ ^{33p 68 1p}
Spectrum
analyzer
Differential encode: off
100
100 _TxVCO
MURATA
MQE9P7-1747
33p
7 19 37 31
39 12
35
fin: 1167MHz ^{1000p 1000p}
−8dBm
47
22k
GSM "Low"
PCN "High"
Detector mode:
positive peak
Unit: R : Ω
C:F
Figure 8
• Phase detector offset current ratio evaluation circuit
1000p 1000p
Signal generator
GSM: VCOIN1 = 901MHz, −20dBm
PCN: VCOIN2 = 1746MHz, −20dBm
39
RFLOIN
Signal generator
8 VCOIN2
1000p
47
GSM: 1172MHz, −8dBm
PCN: 1612MHz, −8dBm
1000p
IFLO 36
IFLO: 540MHz, −10dBm
Signal generator
47
9 VCOIN1
1000p
IIN 16
1.5V
Oscillo scope
47
2.5V
11 PLLOUT
IINB 15
QIN 14
0.5V
1.5V
12 ICURAD
22k
QINB 13
0.5V
Unit: R : Ω
C:F
Figure 9
40