HD155121F Datasheet, PDF (13/57 Pages) Hitachi Semiconductor – RF Transceiver IC for GSM and PCN Dual band cellular systems

HD155121F
AC Specifications (V_CC = 3 V, Ta = 25°C unless otherwise specified.)
• LNA Bias circuit specifications
Item
Mode Min
Typ Max Unit Test Condition
Note
LNA transistor bias current
GSM 4.7
5.6
—
mA
PCN 4.7
5.6
—
mA
Frequency
GSM 925
—
960
MHz
1
PCN 1805
1880 MHz
Power gain
GSM —
19.4 —
dB RF = 940 MHz
1
PCN —
13.4 —
dB RF = 1842 MHz
Noise figure
GSM —
1.6
—
dB RF = 940 MHz
1
PCN —
1.6
—
dB RF = 1842 MHz
3rd order input intercept point GSM —
–6.0 —
dBm
1
PCN —
–2.0 —
dBm
3rd order output intercept point GSM —
13
—
dBm
1
PCN —
11
—
dBm
1dB input compression point GSM —
–14.5 —
dBm
1
PCN —
–9.5 —
dBm
1dB output compression point GSM —
3.9
—
dBm
1
PCN —
2.9
—
dBm
Output (RF) Z
GSM —
50
—
Ω
Output (GSM RF) 1
PCN —
50
—
Ω
Output (PCN RF)
Input (RF) Z
GSM —
50
—
Ω
Input (GSM RF)
1
PCN —
50
—
Ω
Input (PCN RF)
Note: 1. These AC characteristics are shown for reference only and do not form part of the HD155121F
component specification.
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