HD155121F Datasheet, PDF (1/57 Pages) Hitachi Semiconductor – RF Transceiver IC for GSM and PCN Dual band cellular systems

HD155121F
RF Transceiver IC for GSM and PCN Dual band cellular systems
ADE-207-265A (Z)
2nd Edition
May 1999
Description
The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most
of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
LNAs, two first mixers, a second mixer, a programmable gain amplifier, and an IQ demodulator for the
receiver, and an IQ modulator and offset PLL for the transmitter. Also, on chip are dividers for the phase
splitter. Moreover the HD155121F includes control circuits to implement power saving modes. These
functions can operate down to 2.7 V and are housed in a 48-pin LQFP SMD package.
Hence the HD155121F can form a small size transceiver handset for dual band by adding a dual PLL
frequency synthesizer IC, power amplifiers and some external components.
The HD155121F is fabricated using a 0.6 µm double-polysilicon Bi-CMOS process.
Functions
Receiver(Rx)
• Low Noise Amplifier (LNA) bias circuit
• First mixer
• IF amplifier and second mixer
• Programmable Gain Amplifier (PGA)
• IQ demodulator with 90 degree phase splitter
Transmitter(Tx)
• IQ modulator with 90 degree phase splitter
• Offset PLL
 Down converter
 Phase comparator
 TXVCO driver
Others
• IF dividers
• Power saving control circuit
• IFVCO