HN29V51211 Datasheet, PDF (31/42 Pages) Hitachi Semiconductor – 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

Program (4) and Status Data Polling Timing Waveform
HN29V51211 Series
CE
OE
WE
CDE
SC
I/O0 to I/O7
t_CES
t_OEWS t_CWC t_CWC
t_WPH t_WPH
t_CDS t_WPt_CDS t_WP
t_WP
t_CDSS
t_SCS
t_CDH
t_DS
t_DH
t_AS
t_AH
t_AS
t_CDH
t_WSD
t_AH
t_SCC
t_SPL
t_SDH
t_SDS
t_SP
t_CEH
t_CE
t_OEPS
t_OE
t_SW t_WP
t_ASP
*¹
t_CDH
t_SCHW
t_SP ^tDS
t_DH
t_DF
11H SA (1) SA (2) PD0 PD1 PD2111 40H
RES
t_RP
RDY
/Busy
t_DB
t_DB
t_DB
t_RS
High-Z
t_RBSY
I/O7 = V_OL
*²
Notes: 1. The programming operation is not guranteed when the number of the SC pulse exceeds 2112.
2. Any commands, including reset command FFH, cannot be input while RDY/Busy is V_OL.
3. The status returns to the standby status after RDY/Busy returns to High-Z.
4. By using program (4), data can be rewritten for each sector.
t_RDY
t_CDS
t_DF
I/O7 = V_OH
*³
High-Z
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