HN29V51211 Datasheet, PDF (1/42 Pages) Hitachi Semiconductor – 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

HN29V51211 Series
512M AND type Flash Memory
More than 32,113-sector (542,581,248-bit)
ADE-203-1221 (Z)
Preliminary
Rev. 0.0
Sep. 20, 2000
Description
The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211 are more than 32,113 (98% of all
sector address) and less than 32,768 sectors.
Features
• On-board single power supply (V_CC): V_CC = 2.7 V to 3.6 V
• Organization
 AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)
 Data register: (2048 + 64) bytes
• Multi-level memory cell
 2 bit/per memory cell
• Automatic programming
 Sector program time: 1.0 ms (typ)
 System bus free
 Address, data latch function
 Internal automatic program verify function
 Status data polling function
• Automatic erase
 Single sector erase time: 1.0 ms (typ)
 System bus free
 Internal automatic erase verify function
 Status data polling function
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.