HN29V51211 Datasheet, PDF(24/42 Page) Hitachi Semiconductor – 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

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HN29V51211 Datasheet, PDF (24/42 Pages) Hitachi Semiconductor – 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

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HN29V51211 Series

Timing Waveforms

Power on and off Sequence

VCC

tVRS

RES

RDY

/Busy

tRP tCES

tCWRS

tBSY

tCEH tCESR

tRP tCES

High-Z

Ready

tBSY

tCEH tCESR

tCWRH

tVRH

tDFP

Notes: 1. RES must be kept at the VILR level referred to DC characteristics at the rising and falling edges of VCC

to guarantee data stored in the chip.

2. RES must be kept at the VIHR level referred to DC characteristics while I/O7 outputs the VOL level in the

status data polling and RDY/Busy outputs the VOL level.

: Undefined

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