HN29V51211 Datasheet, PDF (23/42 Pages) Hitachi Semiconductor – 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

HN29V51211 Series
Parameter
Symbol Min Typ Max
CE to output delay
OE to output delay
OE high to output float
RES to CE setup time
CDE setup time for WE
CDE hold time for WE
CDE setup time for SC
CDE hold time for SC
t _CE
—
—
120
t _OE
—
—
60
t _DF
—
—
40
t _RP
0.3 —
—
t _CDS
0
—
—
t _CDH
20
—
—
t _CDSS
1.5 —
—
t _CDSH
30
—
—
Next cycle ready time
CDE to OE hold time
CDE to output delay
CDE to output invalid
CE hold time for OE
OE setup time for SC
OE low to output low-Z
t _RDY
t _CDOH
t _CDAC
t _CDF
t _COH
t _OES
t _OEL
0
—
50
—
—
—
—
—
0
—
0
—
0
—
—
—
50
100
—
—
40
SC to output delay
t _SAC
—
—
50
SC to output hold
RDY/Busy setup for SC
t _SH
15
—
—
t _RS
200 —
—
Busy time on read mode
t _RBSY
—
45
—
Note: 1. t_DF is a time after which the I/O pins become open.
Unit Test conditions
ns
ns
ns
ms
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Note
1
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