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HN29V51211 Datasheet, PDF (26/42 Pages) Hitachi Semiconductor – 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)
HN29V51211 Series
Serial Read (1) with CA after SC Timing Waveform
h cycle*5
tCOH *1
CE
OE
WE
tCES
tOEWS
tCWC
tWPH
tCWC
tWPH
tOER
CDE
tWP
tWP
tCDH
tCDS
tCDS
SC
tSCS
tDS tDH tAS tAH
tWP
tOES
tWSD
tSCC
tSCC *2
tAS tAH
tOEL
ttSSAPC tSPL
tSAC
tSH
tSAC
tSH
I/O0 to I/O7
00H
SA(1)
SA(2)
tRP
D0out
D1out
RES
RDY
/Busy
tDB
tRBSY tRS
High-Z
tOEWS
tCWC
tWPH
tOER
tSW
tWP
tSOH
tWP
tOES
tSCC
tSCC *3
tSAC tDF
tAS tAH
D(k)out *2
CA(1)
tSP
tAS
tAH
tSAC tSPL tSAC
tSAC
tOEL
tSH
tSH
CA(2)
D(m)out D(m+1)out
tCPH
tSOH
tSAC tDF
D(m+j)out *3
tCEH*4
tWP tCDH
tCDS
tDS
tDH
FFH
Notes: 1. The status returns to the Standby at the rising edge of CE.
2. Output data is not valid after the number of the SC pulse exceeds 2112. (0 ≤ k ≤ 2111)
3. Output data is not valid after the number of the SC pulse exceeds (2112-m). (j ≤ 2111-m, 0 ≤ m ≤ 2111)
4. After any commands are written, the status can return to the standby after the command FFH is input and CE turns to the VIH level.
5. This interval can be repeated h cycle. (1≤ h ≤ 2048 + 64)
Erase and Status Data Polling Timing Waveform (Sector Erase)
CE
tCES
tCEH
OE
tCWC
tCWC
tCWC
tOEWS
tWPH
tWPH
tWPH
tOEPS
tCE
tOE
tASE
WE
CDE
tCDS tWP
tWP
tCDS
tCDH
tWP
tWP
tCDS
tCDH
tCDH
tSCHW
SC
tSCS
tDS
tDH
tAS
tAH
tAS
tAH
tDS
tDH
I/O0 to I/O7
20H
SA(1)
SA(2)
B0H
tDF
IO7 = VOL
RES
tRP
RDY
/Busy
High-Z
tDB
*1
Notes: 1. Any commands,including reset command FFH, cannot be input while RDY/Busy outputs a VOL.
2. The status returns to the standby status after RDY/Busy returns to High-Z.
tRDY
tCDS
tDF
IO7 = VOH
*2
High-Z
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