HN29V51211 Datasheet, PDF (21/42 Pages) Hitachi Semiconductor – 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

HN29V51211 Series
Parameter
Symbol Min Typ Max Unit Test conditions
Notes
SC setup for WE
CE hold time for OE
t _SW
50
—
—
ns
t _COH
0
—
—
ns
SA (2) to CA (2) delay time t_SCD
RDY/Busy setup for SC
t _RS
—
—
30
µs
200 —
—
ns
Time to device busy
t _DB
—
—
150 ns
Busy time on reset mode
t _RBSY
—
45
—
µs
Notes: 1. t_DF is a time after which the I/O pins become open.
2. t_WSD (min) is specified as a reference point only for SC, if t_WSD is greater than the specified t_WSD (min)
limit, then access time is controlled exclusively by t_SAC.
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