HN29V51211 Datasheet, PDF (17/42 Pages) Hitachi Semiconductor – 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

Status Transition
HN29V51211 Series
Deep
V_CC
standby
RES
Power off
00H/F0H
FFH
CE
Read (1) / (2) ^{SA (1), SA (2)}
setup
Column address
CA(1)
CA(2)
input
CA(1)' ^OE
CA(2)' ^SC
Sector address ^{OE, SC}
input
Read (1) / (2)
90H
FFH
CE
ID read setup ^{CDE, OE} ID read
20H
FFH
Sector
Erase setup
SA (1), SA (2)
Sector
B0H
address input
BUSY
Erase ^{OE Status register}
start
read
Erase finish
CE
Standby
Column address ^{SC, CDE}
input
PD(m)
CA(1)
CA(2)
CA(1)' ^to
CA(2)' ^PD(m+j)
10H
Output /11H
Program
PD0 to
SA (1),
SA (2)
PD2111
Sector address
Program
40H _Program
OE
disable
(1)/(4) setup
input
data input
start
FFH
SC, CDE
Program finish
Status register
read
1FH
SA (1),
/0FH _{Program (2)/(3)} SA (2)
setup
FFH
PD0 to
PD2111*3
Sector address
Program
40H
Program
input _{SC, CDE} data input
start
Program finish
Status register clear 50H
OE _{Status register}
read
Program error or
Erase error
CE*²
FFH*²
OE _{Status register}
read
Error ^CE
standby
ERROR
01H*¹ _{Data recovery} OE, SC _{Data recovery}
read setup
read
Output
12H*¹
Data recovery
SA(1)
SA(2)
Sector address ^40H
disable
write setup
FFH
input
OE
Status register
read
Notes: 1. (01H)/(12H) Data recovery read/write can be used only for Program (1), (2), (3), (4) errors.
2. When reset is done by CE or FFH, error status flag is cleared.
3. When Program (3) mode, input data is PD2048 to PD2111.
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