HN29W12811 Datasheet, PDF (22/42 Pages) Hitachi Semiconductor – 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

HN29W12811 Series
HN29W12811
-60
Parameter
Symbol Min Typ Max
SC setup for CE
SC hold time for WE
CE to output delay
OE to output delay
OE high to output float
RES to CE setup time
CDE setup time for WE
CDE hold time for WE
CDE setup time for SC
CDE hold time for SC
Next cycle ready time
CDE to OE hold time
CDE to output delay
CDE to output invalid
CE setup time for OE
CE hold time for OE
CDE to OE setup time
OE setup time for SC
OE low to output low-Z
SC to output delay
SC to output hold
RDY/Busy setup for SC
CE hold time for WE
CE hold time for WE on recovery
read mode
t _SCS
t _SCHW
t _CE
t _OE
t _DF
t _RP
t _CDS
t _CDH
t _CDSS
t _CDSH
t _RDY
t _CDOH
t _CDAC
t _CDF
t _COS
t _COH
t _CDOS
t _OES
t _OEL
t _SAC
t _SH
t _RS
t _CWH
t _CWHR
0
——
20 — —
— — 120
— — 60
— — 40
1
——
0
——
20 — —
1.5 — —
30 — —
0
——
50 — —
— — 50
— — 100
0
——
0
——
20 — —
0
——
0
— 40
— — 60
15 — —
200 — —
1.0 — —
2
——
WE hold time for WE
t _WWH
1
——
Busy time on read mode
t _RBSY
— 45 —
Note: 1. t_DF is a time after which the I/O pins become open.
Unit
ns
ns
ns
ns
ns
ms
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
Test conditions
Note
1
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