HN29W12811 Datasheet, PDF (21/42 Pages) Hitachi Semiconductor – 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

HN29W12811 Series
Program, Erase and Erase Verify
Parameter
Symbol
Write cycle time
Serial clock cycle time
CE setup time
CE hold time
Write pulse time
Write pulse high time
Address setup time
Address hold time
Data setup time
Data hold time
OE setup time before command
write
t _CWC
t _SCC
t _CES
t _CEH
t _WP
t _WPH
t _AS
t _AH
t _DS
t _DH
t _OEWS
OE setup time before status polling t_OEPS
OE setup time before read
t _OER
Time to device busy
t _DB
Time to device busy on read mode t_DBR
Auto erase time
t _ASE
Auto program time
t _ASP
Program(1), (3)
Program(2)
t _ASP
Program(4),
t _ASP
Data recovery write
WE to SC delay time
WE to SC delay time on recovery
read mode
t _WSD
t _WSDR
CE pulse high time
t _CPH
SC pulse width
t _SP
SC pulse low time
t _SPL
Data setup time for SC
t _SDS
Data hold time for SC
t _SDH
SC setup for WE
t _SW
HN29W12811
-60
Min Typ Max Unit Test conditions
120 — — ns
60 — — ns
0
— — ns
0
— — ns
60 — — ns
40 — — ns
50 — — ns
10 — — ns
50 — — ns
10 — — ns
0
— — ns
40 —
250 —
——
——
— 1.0
— 2.5
— ns
— ns
150 ns
1
µs
14.0 ms
22.0 ms
— 2.0 22.0 ms
— 2.5 30.0 ms
50 — — µs
2
— — µs
200 — — ns
25 — — ns
25 — — ns
0
— — ns
35
—
—
ns
CDE = V_IL
50 — — ns
Note
21