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HN29W12811 Datasheet, PDF (18/42 Pages) Hitachi Semiconductor – 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) | |||
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HN29W12811 Series
DC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to +70ËC)
Parameter
Symbol Min
Typ Max
Unit Test conditions
Input leakage current
I LI
â
â2
µA Vin = VSS to VCC
Output leakage current
I LO
â
â2
µA Vout = VSS to VCC
Standby VCC current
I SB1
â
0.3 1
mA CE = VIH
I SB2
â
30 50
µA CE = VCC ± 0.2 V,
RES = VCC ± 0.2 V
Deep standby VCC current
I SB3
â
1
5
µA RES = VSS ± 0.2 V
Operating VCC current
I CC1
â
5
20
mA Iout = 0 mA, f = 0.2 MHz
I CC2
â
20 40
mA Iout = 0 mA, f = 20 MHz
Operating VCC current (Program) ICC3
â
20 40
mA In programming
Operating VCC current (Erase) ICC4
â
20 40
mA In erase
Input voltage
VIL
â0.3*1, 2 â
0.8
V
VIH
2.0
â
VCC + 0.3*3 V
Input voltage (RES pin)
VILR
â0.2
â 0.2
V
VIHR
VCC â 0.2 â
VCC + 0.2 V
Output voltage
VOL
â
â 0.4
V
IOL = 2 mA
VOH
2.4
ââ
V
IOH = â2 mA
Notes: 1. VIL min = â1.0 V for pulse width ⤠50 ns in the read operation. VIL min = â2.0 V for pulse width ⤠20
ns in the read operation.
2. VIL min = â0.6 V for pulse width ⤠20 ns in the erase/data programming operation.
3. VIH max = VCC + 1.5 V for pulse width ⤠20 ns. If VIH is over the specified maximum value, the
operations are not guaranteed.
AC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to +70ËC)
Test Conditions
⢠Input pulse levels: 0.4 V/2.4 V
⢠Input pulse levels for RES: 0.2 V/VCC â 0.2 V
⢠Input rise and fall time: 5 ns
⢠Output load: 1 TTL gate + 100 pF (Including scope and jig.)
⢠Reference levels for measuring timing: 0.8 V, 1.8 V
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