HN29W12811 Datasheet, PDF (1/42 Pages) Hitachi Semiconductor – 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

HN29W12811 Series
128M AND type Flash Memory
More than 8,029-sector (135,657,984-bit)
ADE-203-1183C (Z)
Rev. 2.0
Feb. 7, 2001
Description
The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all
sector address).
Features
• On-board single power supply (V_CC): V_CC = 3.3 V ± 0.3 V
• Organization
 AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)
 Data register: (2048 + 64) bytes
• Multi-level memory cell
 2 bit/per memory cell
• Automatic programming
 Sector program time: 2.5 ms (typ)
 System bus free
 Address, data latch function
 Internal automatic program verify function
 Status data polling function
• Automatic erase
 Single sector erase time: 1.0 ms (typ)
 System bus free
 Internal automatic erase verify function
 Status data polling function