HN29W12811 Datasheet, PDF (19/42 Pages) Hitachi Semiconductor – 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

HN29W12811 Series
Power on and off, Serial Read Mode
Parameter
Write cycle time
Serial clock cycle time
CE setup time
CE hold time
Write pulse time
Write pulse high time
Address setup time
Address hold time
Data setup time
Data hold time
SC to output delay
OE setup time for SC
OE low to output low-Z
OE setup time before read
OE setup time before command
write
SC to output hold
OE high to output float
WE to SC delay time
RES to CE setup time
SC to OE hold time
SC pulse width
SC pulse low time
SC setup time for CE
CDE setup time for WE
CDE hold time for WE
V_CC setup time for RES
RES to V_CC hold time
CE setup time for RES
RDY/Busy undefined for V_CC off
Symbol
t _CWC
t _SCC
t _CES
t _CEH
t _WP
t _WPH
t _AS
t _AH
t _DS
t _DH
t _SAC
t _OES
t _OEL
t _OER
t _OEWS
t _SH
t _DF
t _WSD
t _RP
t _SOH
t _SP
t _SPL
t _SCS
t _CDS
t _CDH
t _VRS
t _VRH
t _CESR
t _DFP
HN29W12811
-60
Min Typ Max
120 — —
60 — —
0
——
0
——
60 — —
40 — —
50 — —
10 — —
50 — —
10 — —
— — 60
0
——
0
— 40
250 — —
0
——
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Test conditions
Notes
CE = V_IL, OE = V_IH
CE = OE = V_IL, WE = V_IH
15
—
—
ns
CE = OE = V_IL, WE = V_IH
—
—
40
ns
CE = V_IL, WE = V_IH
1
50 — — µs
2
1
— — ms
50 — — ns
25 — — ns
25 — — ns
0
— — ns
0
— — ns
20 — — ns
1
—
—
µs
CE = V_IH
1
—
—
µs
CE = V_IH
1
— — µs
0
— — ns
19