HN29W12811 Datasheet, PDF (17/42 Pages) Hitachi Semiconductor – 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

HN29W12811 Series
Absolute Maximum Ratings
Parameter
Symbol
Value
V_CC voltage
V_SS voltage
All input and output voltages
Operating temperature range
V_CC
V_SS
Vin, Vout
Topr
–0.6 to +4.6
0
–0.6 to V_CC + 0.3
0 to +70
Storage temperature range
Tstg
–65 to +125
Storage temperature under bias
Tbias
–10 to +80
Notes: 1. Relative to V_SS.
2. Vin, Vout = –2.0 V for pulse width ≤ 20 ns.
3. Device storage temperature range before programming.
Unit
V
V
V
˚C
˚C
˚C
Notes
1
1, 2
3
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
Cin
Cout
Min Typ Max Unit Test conditions
— — 6 pF Vin = 0 V
— — 12 pF Vout = 0 V
17